Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate

ABSTRACT

A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a composition and process useful forremoval of post-etch photoresist and/or sacrificial anti-reflectivecoating material from a substrate or article having such materialdeposited thereon.

2. Description of the Related Art

Semiconductor integration as currently evolving requires (i) use ofantireflective coatings, (ii) minimization of etch/ash-induced damage tolow k dielectric material, (iii) minimization of effective k values fordielectric/etch stop interconnect layers and (iv) wide process latitudein terms of permissible conditions and variation of integrationtechniques.

The foregoing requirements can be accommodated by use of etchingoperations without ashing, using a dielectric patterning process thatemploys a sacrificial antireflective coating, in combination with aliquid cleaning chemistry that removes the post-etch photoresist andSARC in a single process step.

Current photolithography processes used in semiconductor manufacturingrequire use of a UV/light-absorbing coating below the photoresist layerto prevent reflection of the stepper UV light. Without this coating,significant amounts of light are reflected off the underlying substrate.Such reflected light, in turn, can create defects during thephotolithographic process, such as photoresist notching resulting fromconstructive and destructive interference, non-uniform photospeed,occurrence of gross photolithographic pattern defects, loss of criticaldimensioning capability, and the like.

Several approaches exist for attaining high absorbance of UV light inphotolithographic processes, including use of bi- and tri-layerphotoresists, use of bottom antireflective coatings (BARCs) andsacrificial antireflective coatings (SARCs). All of these approachesincorporate a UV chromophore into a spin-on polymer matrix that absorbsincident light. All of these antireflective coatings also have aplanarizing effect on topological wafer surfaces encountered in typicaldual damascene integration.

When SiOC-based dielectric materials are employed in the semiconductorintegration, however, the use of SARCs has two important advantages overthe other approaches mentioned above.

First, since SARC materials are based on tetraethylorthosilicate (TEOS),they are etchable in a similar manner and at similar rate to SiOC-baseddielectric material. This allows a very high level of etch uniformityand etch control to be achieved, to such extent that trench etch stoplayers are not required, and via etch stop layers can be reduced inthickness by up to 50%, in relation to the aforementioned alternativeapproaches.

Second, etched SARCs can be removed by liquid cleaner/etchantcompositions, since etched SARCs do not significantly increase theirdegree of cross-linking after etch, in relation to organic-basedphotoresists and BARCs.

When a cleaner/etchant composition is used in back-end-of-line (BEOL)applications to process aluminum or copper interconnected wires,separated by low capacitance (low k) insulating material, or dielectric,it is important that the composition used to remove photoresist residueand SARCs possess good metal compatibility, e.g., a low etch rate oncopper, aluminum, cobalt, etc.

Untreated photoresist possesses solubility in strong aqueous alkalinesolutions as well as solutions of select organic solvents. However,photoresist that has been exposed to gas-phase plasma etching, such istypically used for etching of dielectric materials, will develop ahardened crust on the surface of the material. The hardened crust iscomposed of cross-linked organic polymer and may contain small amountsof silicon or metal atoms. Fluorine-based plasma etches as used in dualdamascene processes may deposit fluorine atoms in the photoresist crust,which may decrease its solubility and increase its resistance tochemical removal.

The photoresist and crust can be removed by gas phase ashing where thesubstrate is exposed to an oxidative or reductive plasma etch, but theseplasma ashing techniques can cause damage to the dielectric, especiallyporous, organosilicate or organic low k materials, causing anunacceptable increase in k value. The semiconductor features of thestructure being fabricated may contain metals vital to the operation ofthe eventual product chip, such as copper, aluminum and alloys ofcobalt.

Hydroxylamine solutions have been utilized in the art for photoresistremoval, but such solutions have associated corrosion, toxicity andreactivity problems that limit their use, with adverse corrosion effectsbeing particularly problematic when copper is employed in the integratedcircuitry.

SUMMARY OF THE INVENTION

The present invention in one aspect relates to a cleaning compositionuseful for removing photoresist and/or sacrificial anti-reflectivecoating (SARC) materials from a substrate having such material(s)thereon. The composition includes an active cleaning combination (ACC)selected from the group consisting of: (a) a quaternary ammonium base incombination with at least one of alkali and alkaline earth base; and (b)a strong base in combination with an oxidant.

Another aspect of the invention relates to a method of removingphotoresist and/or SARC material from a substrate having said materialthereon, said method comprising contacting the substrate with a cleaningcomposition for sufficient time to at least partially remove saidmaterial from the substrate, wherein the cleaning composition includesan active cleaning combination (ACC) selected from the group consistingof: (a) a quaternary ammonium base in combination with at least one ofalkali and alkaline earth base; and (b) a strong base in combinationwith an oxidant.

Other aspects, features and advantages of the invention will be morefully apparent from the ensuing disclosure and appended claims.

DETAILED DESCRIPTION OF THE INVENTION, AND PREFERRED EMBODIMENTS THEREOF

The present invention contemplates cleaning compositions that are usefulto remove photoresist and/or sacrificial anti-reflective coating (SARC)materials from a substrate having such material(s) thereon.

The composition includes an active cleaning combination (ACC) selectedfrom the group consisting of: (a) a quaternary ammonium base incombination with at least one of alkali and alkaline earth base; and (b)a strong base in combination with an oxidant.

Compositions of the invention may be embodied in a wide variety ofspecific formulations, as hereinafter more fully described.

In all such compositions, wherein specific components of the compositionare discussed in reference to weight percentage ranges including a zerolower limit, it will be understood that such components may be presentor absent in various specific embodiments of the composition, and thatin instances where such components are present, they may be present atconcentrations as low as 0.01 weight percent, based on the total weightof the composition in which such components are employed.

The present invention in one aspect thereof relates to a cleaningcomposition useful for removal of SARCs and photoresist, which includesthe following components:

-   0.1-40.0 weight % organic quaternary ammonium base-   0.01-5 weight % alkali or alkaline earth base-   0-80 weight % solvent(s) and/or amine(s)-   0-5 weight % surfactant-   0-10 weight % chelator/passivation agent-   0-98 weight % water    wherein percentages of the components are percentages by weight,    based on total weight of the composition, and wherein the total of    the weight percentages of such components of the composition does    not exceed 100 weight %.

Such composition may optionally include additional components, includingactive as well as inactive ingredients, e.g., stabilizers, dispersants,anti-oxidants, penetration agents, adjuvants, additives, fillers,excipients, etc.

In various embodiments, the composition may variously comprise, consistof, or consist essentially of, the aforementioned organic quaternaryammonium base, alkali or alkaline earth base, solvent(s) and/oramine(s), surfactant, chelator/passivation agent, and water components.

In one specific embodiment, the cleaning composition includes thefollowing components:

-   2-15 weight % organic quaternary ammonium base-   ˜0.01-2 weight % alkali or alkaline earth base-   0-50 weight % solvent(s) and/or amine(s)-   ˜0.01-2 weight % surfactant-   0-5 weight % chelator/passivation agent-   40-95 weight % water    wherein percentages of the components are percentages by weight,    based on total weight of the composition, and wherein the total of    the weight percentages of such components of the composition does    not exceed 100 weight %.

In various preferred embodiments, the cleaning composition is formulatedin the following Formulations A-G, wherein all percentages are byweight, based on the total weight of the formulation:

Formulation A 5.36% benzyltrimethylammonium hydroxide 0.28% potassiumhydroxide  3.0% 4-methylmorpholine N-oxide 0.30% polyoxyethylene(150)dinonylphenyl ether 0.08% 2-mercaptobenzimidazole 91.0% water

Formulation B 5.36% benzyltrimethylammonium hydroxide 0.28% potassiumhydroxide  3.0% 4-methylmorpholine N-oxide 0.30% polyoxyethylene(150)dinonylphenyl ether 0.20% 5-amino-1,3,4-thiadiazole-2-thiol 90.86% water

Formulation C 3.60% benzyltrimethylammonium hydroxide 0.27% potassiumhydroxide  3.5% 4-methylmorpholine N-oxide 15.0%4-(3-aminopropyl)morpholine 0.30% polyoxyethylene(150) dinonylphenylether 0.08% 2-mercaptobenzimidazole 77.25%  water

Formulation D 5.36% benzyltrimethylammonium hydroxide 0.28% potassiumhydroxide 20.0% dimethyl sulfoxide 0.08% 2-mercaptobenzimidazole 74.28% water

Formulation E 5.36% benzyltrimethylammonium hydroxide 0.28% potassiumhydroxide 10.0% tetramethylene sulfone 0.30% oxirane, methyl-, polymerwith oxirane, ether with 2.2′-(oxidoimino)bis(ethanol) (2:1),N(-3(C(-11- isoalkyloxy)propyl)derivatives, C₁₀-rich 0.08%2-mercaptobenzimidazole 83.98%  water

Formulation F 5.36% benzyltrimethylammonium hydroxide 0.28% potassiumhydroxide 10.0% di(ethyleneglycol)butyl ether 10.0%2-(2-dimethylamino)ethoxy)ethanol 0.30% oxirane, methyl-, polymer withoxirane, ether with 2.2′-(oxidoimino)bis(ethanol) (2:1), N(-3(C(-11-isoalkyloxy)propyl)derivatives, C₁₀-rich 74.06%  water

Formulation G 5.36% benzyltrimethylammonium hydroxide 0.28% potassiumhydroxide 10.0% tetramethylene sulfone 10.0% di(ethyleneglycol)butylether 0.10% oxirane, methyl-, polymer with oxirane,mono(octylphenyl)ether 0.08% 2-mercaptobenzimidazole 74.18%  water

In another aspect, the present invention relates to a cleaningcomposition that is useful for stripping photoresist and/or photoresistresidues from semiconductor substrates and/or SARCs while maintainingcobalt and copper compatibility. Such cleaning composition includes anaqueous solution of at least one oxidant, a strong base, optionally achelator and optionally a co-solvent and/or a surfactant. The cleaningcomposition effectively removes photoresist from the top of thesemiconductor device without causing damage to the dielectric materialand without causing corrosion of the underlying metal.

Compositions of such type in which the base component includes potassiumhydroxide are especially advantageous in achieving high efficiencycleaning without adverse effect on the dielectric layer.

Compositions of such type, in one embodiment, include the followingcomponents by weight, based on the total weight of the composition:

-   0.1-30 wt % strong base-   0.01-30 wt % oxidant-   0-10 wt % chelator-   0-5 wt % surfactant-   0-50 wt % co-solvent-   20-98.9 wt % deionized water

As used in such context, the term “strong base” means a cation/anionsalt that dissociates in aqueous or partially aqueous solutions to yieldvirtually stoichiometric amounts of hydroxide anions. The strong basecan include bases such as potassium hydroxide and alkylammoniumhydroxides such as tetramethylammonium hydroxide (TMAH), cholinehydroxide, benzyltrimethylammonium hydroxide, etc.

In one embodiment, the compositions of the invention are devoid ofhydroxylamine.

The oxidant in such composition can include, without limitation,inorganic and/or organic oxidizers, such as hydrogen peroxide, organicperoxides, amine-N-oxides, perborate salts, persulfate salts, as well ascombinations of two or more of the foregoing.

The chelator in such composition can be of any suitable type, and mayinclude, without limitation, triazoles, such as 1,2,4-triazole, ortriazoles substituted with substituents such as C1-C8 alkyl, amino,thiol, mercapto, imino, carboxy and nitro groups, such as benzotriazole,tolyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole,3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole,hydroxybenzotriazole, 2-(5-amino-pentyl)-benzotriazole,1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole,3-amino-1,2,4-triazole, 3-mercapto-1,2,4-triazole,3-isopropyl-1,2,4-triazole, 5-phenylthiol-benzotriazole,halo-benzotriazoles (halo=F, Cl, Br or I), naphthotriazole, and thelike, as well as thiazoles, tetrazoles, imidazoles, phosphates, thiolsand azines such as 2-mercaptobenzoimidizole, 2-mercaptobenzothiazole,4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 5-aminotetrazole,5-amino-1,3,4-thiadiazole-2-thiol, 2,4-diamino-6-methyl-1,3,5-triazine,thiazole, triazine, methyltetrazole, 1,3-dimethyl-2-imidazolidinone,1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole,diaminomethyltriazine, mercaptobenzothiazole, imidazoline thione,mercaptobenzimidazole, 4-methyl-4H-1,2,4-triazole-3-thiol,5-amino-1,3,4-thiadiazole-2-thiol, benzothiazole, tritolyl phosphate,indiazole, etc. Suitable chelator species further include glycerols,amino acids, carboxylic acids, alcohols, amides and quinolines such asguanine, adenine, glycerol, thioglycerol, nitrilotriacetic acid,salicylamide, iminodiacetic acid, benzoguanamine, melamine,thiocyranuric acid, anthranilic acid, gallic acid; ascorbic acid;salicylic acid; 8-hydroxyquinoline, 5-carboxylic acid-benzotriazole,3-mercaptopropanol, boric acid, iminodiacetic acid, etc. The chelator isusefully employed to increase the compatibility of the composition withthe metals and the dielectric materials used in the semiconductordevice.

The surfactant employed in the composition can be of any suitable type,e.g., nonionic surfactants such as fluoroalkyl surfactants, polyethyleneglycols, polypropylene glycols, polyethylene or polypropylene glycolethers, carboxylic acid salts, dodecylbenzenesulfonic acid or saltsthereof, polyacrylate polymers, dinonylphenyl polyoxyethylene, or othersubstituted phenyl polyoxyethylenes, silicone or modified siliconepolymers, acetylenic diols or modified acetylenic diols, alkylammoniumor modified alkylammonium salts, as well as combinations of two or moreof the foregoing.

Suitable co-solvent species for such composition include, withoutlimitation, amines such as dimethyldiglycolamine,1,8-diazabicyclo[5.4.0]undecene, aminopropylmorpholine, triethanolamine,methylethanolamine, methyldiethanolamine, etc. or glycols such asethylene or polyethylene, propylene glycol, neopentyl glycol, etc.,amines such as hydroxyethylmorpholine, aminopropylmorpholine, etc. orglycol ethers such as di(ethylene glycol)monoethyl ether, di(propyleneglycol)propyl ether, ethylene glycol phenyl ether, di(propylene glycol)butyl ether, butyl carbitol, etc., or polyglycol ethers.

Specific embodiments of such composition are set out as Formulations H-Sbelow, wherein all percentages are by weight, based on the total weightof the composition.

Formulation H tetramethylammonium hydroxide, 25% aqueous solution 14.7%N-methylmorpholine oxide, 50% aqueous solution 7.0% dinonylphenolpolyoxyethylene, 7% aqueous solution 4.3%3-amino-5-mercapto-1,2,4-triazole 0.1% water 73.9%

Formulation I tetramethylammonium hydroxide, 25% aqueous solution 14.7%N-methylmorpholine oxide, 50% aqueous solution 7.0% dinonylphenolpolyoxyethylene, 7% aqueous solution 4.3% ammonium tetrathiomolybdate0.1% water 73.9%

Formulation J tetramethylammonium hydroxide, 25% aqueous solution 14.7%N-methylmorpholine oxide, 50% aqueous solution 7.0% dinonylphenolpolyoxyethylene, 7% aqueous solution 4.3% 2-mercaptobenzimidazole 0.1%aminopropylmorpholine 20.0% water 53.9%

Formulation K tetramethylammonium hydroxide, 25% aqueous solution 14.7%N-methylmorpholine oxide, 50% aqueous solution 7.0% dinonylphenolpolyoxyethylene, 7% aqueous solution 4.3% 2-mercaptobenzimidazole 0.1%N-ethylmorpholine 20.0% water 53.9%

Formulation L tetramethylammonium hydroxide, 25% aqueous solution 14.7%N-methylmorpholine oxide, 50% aqueous solution 7.0% dinonylphenolpolyoxyethylene, 7% aqueous solution 4.3% 2-mercaptobenzimidazole 0.1%aminoethylpiperidine 20.0% water 53.9%

Formulation M tetramethylammonium hydroxide, 25% aqueous solution 14.7%N-methylmorpholine oxide, 50% aqueous solution 7.0% dinonylphenolpolyoxyethylene, 7% aqueous solution 4.3% 3-amino-5-1,2,4-triazole 0.1%aminopropylmorpholine 20.0% water 53.9%

Formulation N tetramethylammonium hydroxide, 25% aqueous solution 14.7%N-methylmorpholine oxide, 50% aqueous solution 7.0% dinonylphenolpolyoxyethylene, 7% aqueous solution 4.3% 3-amino-5-1,2,4-triazole 0.1%aminopropylmorpholine 10.0% water 63.9%

Formulation O tetramethylammonium hydroxide, 25% aqueous solution 14.7%N-methylmorpholine oxide, 50% aqueous solution 7.0% dinonylphenolpolyoxyethylene, 7% aqueous solution 4.3% 2-mercaptobenzimidazole 0.1%aminopropylmorpholine 20.0% water 53.9%

Formulation P tetramethylammonium hydroxide, 25% aqueous solution 14.7%N-methylmorpholine oxide, 50% aqueous solution 7.0% dinonylphenolpolyoxyethylene 7% aqueous solution 4.3% 2-mercaptobenzimidazole 0.1%aminopropylmorpholine 10.0% water 63.9%

Formulation Q benzyltrimethylammonium hydroxide, 40% aqueous solution9.0% potassium hydroxide, 45% aqueous solution 0.6% N-methylmorpholineoxide, 50% aqueous solution 7.0% dinonylphenol polyoxyethylene, 7%aqueous solution 4.3% 2-mercaptobenzimidazole 0.1% aminopropylmorpholine20.0%  water 59.02% 

Formulation R benzyltrimethylammonium hydroxide, 40% aqueous solution9.0% potassium hydroxide, 45% aqueous solution 0.6% N-methylmorpholineoxide, 50% aqueous solution 7.0% dinonylphenol polyoxyethylene, 7%aqueous solution 4.3% 2-mercaptobenzimidazole 0.1% aminopropylmorpholine15.0%  water 64.02% 

Formulation S benzyltrimethylammonium hydroxide, 40% aqueous solution9.0% potassium hydroxide, 45% aqueous solution 0.6% N-methylmorpholineoxide, 50% aqueous solution 7.0% dinonylphenol polyoxyethylene, 7%aqueous solution 4.3% 2-mercaptobenzimidazole 0.1% aminopropylmorpholine10.0%  water 69.02% 

In another aspect, the invention contemplates cleaning compositions thatinclude the following components by weight, based on the total weight ofthe composition:

-   0.1-30 wt % strong base-   2-30 wt % oxidant-   0-10 wt % chelator-   0-5 wt % surfactant-   0-50 wt % co-solvent-   20-98 wt % deionized water

The strong base, oxidant, chelator, co-solvent and surfactant species insuch composition may be of same or corresponding species to thosediscussed illustratively hereinabove.

Specific embodiments of such composition are set out as Formulations T,U, V, W, X, Y, Z, A², B², C², D², E², F², G², H², I², J², K² and L²below, wherein all percentages are by weight, based on the total weightof the composition.

Formulation T benzyltrimethylammonium hydroxide, 40% aqueous solution13.4%  N-methylmorpholine oxide, 50% aqueous solution 7.0% Potassiumhydroxide, 45% aqueous solution 0.6% 2-mercaptobenzimidazole 0.08% dinonylphenol polyoxyethylene 0.3% water 78.62% 

Formulation U benzyltrimethylammonium hydroxide, 40% aqueous solution13.4%  N-methylmorpholine oxide, 50% aqueous solution 7.0% Potassiumhydroxide, 45% aqueous solution 1.2% 2-mercaptobenzimidazole 0.08% dinonylphenol polyoxyethylene 0.3% water 78.02% 

Formulation V tetramethylammonium hydroxide, 25% aqueous solution 5.85% N-methylmorpholine oxide, 50% aqueous solution 7.0% Potassium hydroxide,45% aqueous solution 1.2% 2-mercaptobenzimidazole 0.08%  dinonylphenolpolyoxyethylene 0.3% water 85.57% 

Formulation W tetramethylammonium hydroxide, 25% aqueous solution 2.93% N-methylmorpholine oxide, 50% aqueous solution 7.0% Potassium hydroxide,45% aqueous solution 1.2% 2-mercaptobenzimidazole 0.08%  dinonylphenolpolyoxyethylene 0.3% water 88.49% 

Formulation X benzyltrimethylammonium hydroxide, 40% aqueous solution7.2% N-methylmorpholine oxide, 50% aqueous solution 7.0% Potassiumhydroxide, 45% aqueous solution 0.6% 2-mercaptobenzimidazole 0.08% dinonylphenol polyoxyethylene 0.3% water 84.82% 

Formulation Y benzyltrimethylammonium hydroxide, 40% aqueous solution3.6% N-methylmorpholine oxide, 50% aqueous solution 7.0% Potassiumhydroxide, 45% aqueous solution 1.2% 2-mercaptobenzimidazole 0.08% dinonylphenol polyoxyethylene 0.3% water 87.82% 

Formulation Z benzyltrimethylammonium hydroxide, 40% aqueous solution3.6% N-methylmorpholine oxide, 50% aqueous solution 7.0% Potassiumhydroxide, 45% aqueous solution 0.6% 2-mercaptobenzimidazole 0.08% dinonylphenol polyoxyethylene 0.3% water 88.42% 

Formulation A² benzyltrimethylammonium hydroxide, 40% aqueous solution7.2% N-methylmorpholine oxide, 50% aqueous solution 7.0% Potassiumhydroxide, 45% aqueous solution 0.3% 2-mercaptobenzimidazole 0.08% dinonylphenol polyoxyethylene 0.3% water 85.12% 

Formulation B² benzyltrimethylammonium hydroxide, 40% aqueous solution22.26%  Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole 0.08% methyldiethanolamine 2.33% phosphoric acid(86%) 1.69% 3-amino-5-mercapto-1,2,4-triazole  1.0% water 72.04% 

Formulation C² benzyltrimethylammonium hydroxide, 40% aqueous solution22.26%  Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole 0.08% methyldiethanolamine 2.33% phosphoric acid(86%) 1.69% 4-methyl-2-phenyl-imidazole  1.0% water 72.04% 

Formulation D² benzyltrimethylammonium hydroxide, 40% aqueous solution22.26%  Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole 0.08% methyldiethanolamine 2.33% phosphoric acid(86%) 1.69% 2-mercaptothiazoline  1.0% water 72.04% 

Formulation E² benzyltrimethylammonium hydroxide, 40% aqueous solution22.26%  Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole 0.08% methyldiethanolamine 2.33% phosphoric acid(86%) 1.69% 8-hydroxyquinoline  1.0% water 72.04% 

Formulation F² benzyltrimethylammonium hydroxide, 40% aqueous solution22.26%  Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole 0.08% methyldiethanolamine 2.33% phosphoric acid(86%) 1.69% 1-phenyl-2-tetrazoline-5-thione  1.0% water 72.04% 

Formulation G² benzyltrimethylammonium hydroxide, 40% aqueous solution22.26%  Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole 0.08% methyldiethanolamine 2.33% phosphoric acid(86%) 1.69% gallic acid  1.0% water 72.04% 

Formulation H² benzyltrimethylammonium hydroxide, 40% aqueous solution22.26%  Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole 0.08% methyldiethanolamine 2.33% phosphoric acid(86%) 1.69% salicylic acid  1.0% water 72.04% 

Formulation I² benzyltrimethylammonium hydroxide, 40% aqueous solution22.26%  Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole 0.08% methyldiethanolamine 2.33% phosphoric acid(86%) 1.69% ascorbic acid  1.0% water 72.04% 

Formulation J² benzyltrimethylammonium hydroxide, 40% aqueous solution7.2% Potassium hydroxide, 45% aqueous solution 0.6%2-mercaptobenzimidazole 0.08%  aminopropyl morpholine  10%4-methyl-2-phenyl-imidazole 1.0% water 81.12% 

Formulation K² benzyltrimethylammonium hydroxide, 40% aqueous solution7.2% Potassium hydroxide, 45% aqueous solution 0.6%2-mercaptobenzimidazole 0.08%  aminopropyl morpholine  10%4-methyl-2-phenyl-imidazole 0.5% water 81.62% 

Formulation L² benzyltrimethylammonium hydroxide, 40% aqueous solution7.2% Potassium hydroxide, 45% aqueous solution 0.6%2-mercaptobenzimidazole 0.08%  aminopropyl morpholine  10%4-methyl-2-phenyl-imidazole 1.0% water 81.02%  dinonylphenolpolyoxyethylene 0.1%Still other formulations within the broad scope of the presentinvention, which are suitable for stripping photoresist and/orphotoresist residues from semiconductor substrates, while maintainingcobalt and copper compatibility, include the formulations M², N², O²,P², Q² and R² whose compositions are set out below.

Formulation M² tetramethylammonium hydroxide, 25% aqueous solution 4.0%hydrogen peroxide, 30% aqueous solution 2.0% 5-aminotetrazole 0.1% water93.9%

Formulation N² tetramethylammonium hydroxide, 25% aqueous solution 4.0%hydrogen peroxide, 30% aqueous solution 2.0%2,4-diamino-6-methyl-1,3,5-triazine 0.1% water 93.9%

Formulation O² tetramethylammonium hydroxide, 25% aqueous solution 4.0%hydrogen peroxide, 30% aqueous solution 2.0%5-amino-1,3,4-thiadiazole-2-thiol 0.1% water 93.9%

Formulation P² tetramethylammonium hydroxide, 25% aqueous solution 4.0%hydrogen peroxide, 30% aqueous solution 2.0% 1,2,4-triazole 0.1% water93.9%

Formulation Q² tetramethylammonium hydroxide, 25% aqueous solution 4.0%hydrogen peroxide, 30% aqueous solution 2.0%2,4-dihydroxy-6-methylpyrimidine 0.1% water 93.9%

Formulation R² tetramethylammonium hydroxide, 25% aqueous solution 4.0%hydrogen peroxide, 30% aqueous solution 2.0% 8-hydroxyquinoline 0.1%water 93.9%

The cleaning compositions of the invention are easily formulated bysimple addition of the respective ingredients and mixing to homogeneouscondition.

In cleaning application, the cleaning composition is applied in anysuitable manner to the material to be cleaned, e.g., by spraying thecleaning composition on the surface of the material to be cleaned, bydipping (in a volume of the cleaning composition) of the material orarticle including the material to be cleaned, by contacting the materialor article to be cleaned with another material, e.g., a pad, or fibroussorbent applicator element, that is saturated with the cleaningcomposition, or by any other suitable means, manner or technique, bywhich the cleaning composition is brought into cleaning contact withmaterial to be cleaned.

As applied to semiconductor manufacturing operations, the cleaningcompositions of the present invention are usefully employed to removephotoresist and/or SARC materials from substrates and semiconductordevice structures on which such material(s) have been deposited.

The compositions of the present invention, by virtue of theirselectivity for such photoresist and/or SARC materials, relative toother materials that may be present on the semiconductor substrate andexposed to the cleaning composition, such as ILD structures,metallization, barrier layers, etc., achieve removal of the photoresistand/or SARC material(s) in a highly efficient manner.

In use of the compositions of the invention for removing photoresistand/or SARC materials from semiconductor substrates having same thereon,the cleaning composition typically is contacted with the substrate for atime of from about 10 to about 45 minutes, at temperature in a range offrom about 50° C. to about 80° C. Such contacting times and temperaturesare illustrative, and any other suitable time and temperature conditionsmay be employed that are efficacious to at least partially remove thephotoresist and/or SARC material from the substrate, within the broadpractice of the invention.

Following the achievement of the desired cleaning action, the cleaningcomposition is readily removed from the substrate or article to which ithas previously been applied, e.g., by rinse, wash, or other removalstep(s), as may be desired and efficacious in a given end useapplication of the compositions of the present invention.

The features and advantages of the invention are more fully illustratedby the following non-limiting examples, wherein all parts andpercentages are by weight, unless otherwise expressly stated.

EXAMPLE 1

Samples of Formulations A, B, C, D, E, F and G, having the respectivecompositions described hereinabove, were prepared.

The efficacy of these formulations for removing photoresist and SARCfrom a substrate containing same coated thereon, while maintaining a lowetching action on copper metallization on such substrate, was evaluatedin corresponding tests in which the cleaning composition of theparticular formulation was contacted with the substrate for 6-15 minutesat 60-70° C. followed by rinsing of the substrate with deionized water.The substrate was a post-etch structure on a silicon wafer containingpatterned organosilicate dielectric and SARC structures underneathpatterned photoresist. The photoresist was a standard commerciallyavailable chemically amplified resist for 193 or 248 nm lithography. TheSARC material was consisted of a commercially available spin-onpolysiloxane material layer incorporating a dye material that stronglyabsorbs light at the frequency used for lithography.

Following such contacting and rinse steps, the percentage removal ofphotoresist, the percentage removal of SARC, and the copper etch rate,in Angstroms per minute (Å/min), were determined. The corresponding dataare set out in Table 1 below.

TABLE 1 Percentage Photoresist Removal, Percentage SARC Removal and CuEtch Rate (Å/min) of Formulations A-G Photoresist SARC Cu Etch RateFormulation Removal, % Removal, % (Å/min) A 100 100 0.77 B 100 100 1.3 C100 100 2.5 D 99 100 — E 99 100 0.42 F 85 100 1.3 G 100 100 0.70

EXAMPLE 2

Samples of Formulations H, I, J, K, L, M, N, O, P, Q, R and S, havingthe respective compositions described hereinabove, were prepared.

The efficacy of these formulations for removing photoresist residuesfrom a semiconductor substrate having photoresist, copper and cobaltmetal thereon, while maintaining a low etching action on the copper andcobalt on such substrate, was evaluated in corresponding tests in whichthe cleaning composition of the particular formulation was contactedwith the substrate at 60-70° C. following by rinsing of the substratewith deionized water. The substrate was a post-etch structure on asilicon wafer containing patterned organosilicate dielectric and SARCstructures underneath patterned photoresist. The photoresist was astandard commercially available chemically amplified resist for 193 or248 nm lithography. Substantial cleaning is defined as greater than 80%removal of the photoresist from the semiconductor device, as determinedby optical microscopy.

Data are set out in Table 2 below.

TABLE 2 Cleaning Performance of Formulations H-S Temper- Contact CobaltCopper % Formu- ature, Time, Compati- Compati- Cleaning of lation ° C.Min. bility bility Photoresist H 70 30 slight etch rate of 100roughening 0.62 Å/min of surface I 70 20 slight incompatible 100roughening of surface J 70 30 good good 100 K 70 30 some surface good100 deposition, no thickness change L 70 30 good good 100 M 70 30 goodgood 100 N 70 30 good good 100 O 70 30 good good 100 P 70 30 good good100 Q 60 30 good good 100 R 60 30 good good 100 S 60 30 good good 100

EXAMPLE 3

Samples of Formulations T, U, V, W, X, Y, Z, A², B², C², D², E², F², G²,H², I², J², K² and L², having the respective compositions describedhereinabove, were prepared.

The efficacy of these formulations, for removing photoresist residuesfrom a semiconductor substrate having photoresist thereon, was evaluatedin corresponding tests in which the cleaning composition of theparticular formulation was contacted with the substrate for 12 minutesat 70° C. following by rinsing of the substrate with deionized water.The substrate was a post-etch structure on a silicon wafer containingpatterned organosilicate dielectric and SARC structures underneathpatterned photoresist. The photoresist was a standard commerciallyavailable chemically amplified resist for 193 or 248 rum lithography.Substantial cleaning is defined as greater than 80% removal of thephotoresist from the semiconductor device, as determined by opticalmicroscopy.

Results are set out in Table 3 below.

TABLE 3 Percentage Photoresist Removal of Formulations T-A² PercentageRemoval of Formulation Photoresist From Substrate T 100 U 100 V 100 W100 X 100 Y 95 Z 95 A² 100

TABLE 5 Cleaning Performance of Formulations B²-L² Formu- TemperatureContact Time, Cobalt % Cleaning of lation ° C. Min. CompatibilityPhotoresist B² 60 60 good 100 C² 60 60 good 100 D² 60 60 good 100 E² 6060 good 100 F² 60 60 good 100 G² 60 60 good 100 H² 60 60 good 100 I² 6060 good 100 J² 60 60 decent 100 K² 60 60 decent 100 L² 60 60 decent 100

EXAMPLE 4

Samples of Formulations M², N², O², P², Q² and R², having the respectivecompositions described hereinabove, were prepared.

The efficacy of these formulations for removing photoresist residuesfrom a semiconductor substrate having photoresist, copper and cobaltmetal thereon, while maintaining a low etching action on the copper andcobalt on such substrate, was evaluated in corresponding tests in whichthe cleaning composition of the particular formulation was contactedwith the substrate at 70° C. followed by rinsing of the substrate withdeionized water. The substrate was a post-etch structure on a siliconwafer containing patterned organosilicate dielectric and SARC structuresunderneath patterned photoresist. The photoresist was a standardcommercially available chemically amplified resist for 193 or 248 nmlithography. Substantial cleaning is defined as greater than 80% removalof the photoresist from the semiconductor device, as determined byoptical microscopy.

Data are set out in Table 5 below.

TABLE 5 Cleaning Performance of Formulations M²-R² Cobalt Copper %Clean- Tempera- Contact Cobalt Etch Etch ing of Formu- ture Time,Compat- Rate, Rate, Photo- lation ° C. Min. ibility Å/min Å/min resistM² 70 30 good 0.048 0.84 100 N² 70 30 good 0.16 0.52 100 O² 70 30 good0.21 0.72 100 P² 70 30 good — incom- 100 patible Q² 70 30 good — 2.55100 R² 70 30 good — incom- 100 patible

The foregoing examples demonstrate that the cleaning compositions of theinvention are useful for removal of photoresist and/or SARCs fromsemiconductor substrates having same coated thereon. Further, suchcompositions can be employed without adverse effect on metallization onthe substrate, e.g., copper, aluminum and cobalt alloys.

Further, the cleaning compositions of the invention are readilyformulated with suitable solvent systems, e.g., aqueous and semi-aqueoussolvent systems, conferring low toxicity and low combustibilitycharacteristics to such compositions.

Accordingly, the cleaning compositions of the present invention achievea substantial advance in the art of removing photoresist and/or SARCmaterials, in the manufacture of integrated circuit devices.

Although the invention has been variously disclosed herein withreference to illustrative embodiments and features, it will beappreciated that the embodiments and features described hereinabove arenot intended to limit the invention, and that other variations,modifications and other embodiments will suggest themselves to those ofordinary skill in the art, based on the disclosure herein. The inventiontherefore is to be broadly construed, as encompassing all suchvariations, modifications and alternative embodiments within the spiritand scope of the claims hereafter set forth.

1. A cleaning composition comprising a quaternary base, at least onealkali or alkaline earth base, and at least one additional componentselected from the group consisting of a chelator, an oxirane species,and combinations thereof, wherein said chelator comprises a speciesselected from the group consisting of: 1-amino-1,2,4-triazole;1-amino-1,2,3-triazole; 1-amino-5-methyl-1,2,3-triazole;3-mercapto-1,2,4-triazole; 3-isopropyl-1,2,4-triazole; naphthotriazole;2-mercaptobenzimidazole; 5-aminotetrazole;5-amino-1,3,4-thiadiazole-2-thiol; 2,4-diamino-6-methyl-1,3,5-triazine;triazine; methyltetrazole; 1,5-pentamethylenetetrazole;1-phenyl-5-mercaptotetrazole; diaminomethyltriazine; imidazoline thione;4-methyl-4H-1,2,4-triazole-3-thiol; 5-amino-1,3,4-thiadiazole-2-thiol;tritolyl phosphate; indiazole; adenine; salicylamide; iminodiaceticacid; benzoguanamine; thiocyranuric acid; anthranilic acid;3-mercaptopropanol; and combinations thereof, and wherein the oxiranespecies comprises a species selected from the group consisting of:oxirane, methyl-, polymer with oxirane, ether with2,2′-(oxidoimino)bis(ethanol) (2:1),N(-3(C9-11-isoalkyloxy)propyl)derivatives, C₁₀-rich; and oxirane,methyl-, polymer with oxirane, mono(octylphenyl)ether.
 2. The cleaningcomposition of claim 1, which is devoid of hydroxylamine therein.
 3. Thecleaning composition of claim 1, comprising the following components:0.1-40.0 weight % organic quaternary base; 0.01-5 weight % alkali oralkaline earth base; 0-80 weight % solvent(s) and/or amine(s); 0-5weight % surfactant; 0-10 weight % chelator/passivation agent; and 0-98weight % water, wherein percentages of the components are percentages byweight, based on total weight of the composition, and wherein the totalof the weight percentages of such components of the composition does notexceed 100 weight %.
 4. The cleaning composition of claim 1, includingat least one additional ingredient selected from the group consisting ofstabilizers, dispersants, anti-oxidants, fillers, penetration agents,adjuvants, additives, and excipients.
 5. The cleaning composition ofclaim 1, comprising the following components: 2-15 weight % organicquaternary base; ˜0.01-2 weight % alkali or alkaline earth base; 0-50weight % solvent(s) and/or amine(s); ˜0.01-2 weight % surfactant; 0-5weight % chelator/passivation agent; and 40-95 weight % water, whereinpercentages of the components are percentages by weight, based on totalweight of the composition, and wherein the total of the weightpercentages of such components of the composition does not exceed 100weight %.
 6. The cleaning composition of claim 1, selected from thegroup consisting of Formulations A-C², wherein all percentages are byweight, based on the total weight of the formulation: Formulation A5.36% benzyltrimethylammonium hydroxide 0.28% potassium hydroxide  3.0%4-methylmorpholine N-oxide 0.30% polyoxyethylene (150) dinonylphenylether 0.08% 2-mercaptobenzimidazole 91.0% water

Formulation B  5.36% benzyltrimethylammonium hydroxide  0.28% potassiumhydroxide  3.0% 4-methylmorpholine N-oxide  0.30% polyoxyethylene (150)dinonylphenyl ether  0.20% 5-amino-1,3,4-thiadiazole-2-thiol 90.86%water

Formulation C  3.60% benzyltrimethylammonium hydroxide  0.27% potassiumhydroxide  3.5% 4-methylmorpholine N-oxide  15.0%4-(3-aminopropyl)morpholine  0.30% polyoxyethylene (150) dinonylphenylether  0.08% 2-mercaptobenzimidazole 77.25% water

Formulation D  5.36% benzyltrimethylammonium hydroxide  0.28% potassiumhydroxide  20.0% dimethyl sulfoxide  0.08% 2-mercaptobenzimidazole74.28% water

Formulation E  5.36% benzyltrimethylammonium hydroxide  0.28% potassiumhydroxide  10.0% tetramethylene sulfone  0.30% oxirane, methyl-, polymerwith oxirane, ether with 2,2′-(oxidoimino)bis(ethanol) (2:1), N(-3(C9-11-isoalkyloxy)propyl) derivatives, C₁₀-rich  0.08%2-mercaptobenzimidazole 83.98% water

Formulation F  5.36% benzyltrimethylammonium hydroxide  0.28% potassiumhydroxide  10.0% di(ethyleneglycol)butyl ether  10.0%2-(2-dimethylamino)ethoxy)ethanol  0.30% oxirane, methyl-, polymer withoxirane, ether with 2,2′-(oxidoimino)bis(ethanol) (2:1), N(-3(C9-11-isoalkyloxy)propyl) derivatives, C₁₀-rich 74.06% water

Formulation G  5.36% benzyltrimethylammonium hydroxide  0.28% potassiumhydroxide  10.0% tetramethylene sulfone  10.0% di(ethyleneglycol)butylether  0.10% oxirane, methyl-, polymer with oxirane,mono(octylphenyl)ether  0.08% 2-mercaptobenzimidazole 74.18% water,

Formulation H benzyltrimethylammonium hydroxide, 40% aqueous solution 9.0% potassium hydroxide, 45% aqueous solution  0.6% N-methylmorpholineoxide, 50% aqueous solution  7.0% dinonylphenol ethoxylate, 7% aqueoussolution  4.3% 2-mercaptobenzimidazole  0.1% aminopropylmorpholine 20.0% water 59.02%

Formulation I benzyltrimethylammonium hydroxide, 40% aqueous solution 9.0% potassium hydroxide, 45% aqueous solution  0.6% N-methylmorpholineoxide, 50% aqueous solution  7.0% dinonylphenol ethoxylate, 7% aqueoussolution  4.3% 2-mercaptobenzimidazole  0.1% aminopropylmorpholine 15.0% water 64.02%

Formulation J benzyltrimethylammonium hydroxide, 40% aqueous solution 9.0% potassium hydroxide, 45% aqueous solution  0.6% N-methylmorpholineoxide, 50% aqueous solution  7.0% dinonylphenol ethoxylate, 7% aqueoussolution  4.3% 2-mercaptobenzimidazole  0.1% aminopropylmorpholine 10.0% water 69.02%

Formulation K benzyltrimethylammonium hydroxide, 40% aqueous solution 13.4% N-methylmorpholine oxide, 50% aqueous solution  7.0% KOH, 45%aqueous solution  0.6% 2-mercaptobenzimidizole  0.08% dinonylphenolpolyoxyethylene  0.3% water 78.62%

Formulation L benzyltrimethylammonium hydroxide, 40% aqueous solution 13.4% N-methylmorpholine oxide, 50% aqueous solution  7.0% KOH, 45%aqueous solution  1.2% 2-mercaptobenzimidizole  0.08% dinonylphenolpolyoxyethylene  0.3% water 78.02%

Formulation M tetramethylammonium hydroxide, 25% aqueous solution  5.85%N-methylmorpholine oxide, 50% aqueous solution  7.0% KOH, 45% aqueoussolution  1.2% 2-mercaptobenzimidizole  0.08% dinonylphenolpolyoxyethylene  0.3% water 85.57%

Formulation N tetramethylammonium hydroxide, 25% aqueous solution  2.93%N-methylmorpholine oxide, 50% aqueous solution  7.0% KOH, 45% aqueoussolution  1.2% 2-mercaptobenzimidizole  0.08% dinonylphenolpolyoxyethylene  0.3% water 88.49%

Formulation O benzyltrimethylammonium hydroxide, 40% aqueous solution 7.2% N-methylmorpholine oxide, 50% aqueous solution  7.0% KOH, 45%aqueous solution  0.6% 2-mercaptobenzimidizole  0.08% dinonylphenolpolyoxyethylene  0.3% water 84.82%

Formulation P benzyltrimethylammonium hydroxide, 40% aqueous solution 3.6% N-methylmorpholine oxide, 50% aqueous solution  7.0% KOH, 45%aqueous solution  1.2% 2-mercaptobenzimidizole  0.08% dinonylphenolpolyoxyethylene  0.3% water 87.82%

Formulation Q benzyltrimethylammonium hydroxide, 40% aqueous solution 3.6% N-methylmorpholine oxide, 50% aqueous solution  7.0% KOH, 45%aqueous solution  0.6% 2-mercaptobenzimidizole  0.08% dinonylphenolpolyoxyethylene  0.3% water 88.42%

Formulation R benzyltrimethylammonium hydroxide, 40% aqueous solution 7.2% N-methylmorpholine oxide, 50% aqueous solution  7.0% KOH, 45%aqueous solution  0.3% 2-mercaptobenzimidizole  0.08% dinonylphenolpolyoxyethylene  0.3% water 85.12%,

Formulation S benzyltrimethylammonium hydroxide, 40% aqueous solution22.26% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% methyldiethanolamine  2.33% phosphoricacid (86%)  1.69% 3-amino-5-mercapto-1,2,4-triazole  1.0% water 72.04%

Formulation T benzyltrimethylammonium hydroxide, 40% aqueous solution22.26% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% methyldiethanolamine  2.33% phosphoricacid (86%)  1.69% 4-methyl-2-phenyl-imidazole  1.0% water 72.04%

Formulation U benzyltrimethylammonium hydroxide, 40% aqueous solution22.26% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% methyldiethanolamine  2.33% phosphoricacid (86%)  1.69% 2-mercaptothiazoline  1.0% water 72.04%

Formulation V benzyltrimethylammonium hydroxide, 40% aqueous solution22.26% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% methyldiethanolamine  2.33% phosphoricacid (86%)  1.69% 8-hydroxyquinoline  1.0% water 72.04%

Formulation W benzyltrimethylammonium hydroxide, 40% aqueous solution22.26% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% methyldiethanolamine  2.33% phosphoricacid (86%)  1.69% 1-phenyl-2-tetrazoline-5-thione  1.0% water 72.04%

Formulation X benzyltrimethylammonium hydroxide, 40% aqueous solution22.26% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% methyldiethanolamine  2.33% phosphoricacid (86%)  1.69% gallic acid  1.0% water 72.04%

Formulation Y benzyltrimethylammonium hydroxide, 40% aqueous solution22.26% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% methyldiethanolamine  2.33% phosphoricacid (86%)  1.69% salicylic acid  1.0% water 72.04%

Formulation Z benzyltrimethylammonium hydroxide, 40% aqueous solution22.26% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% methyldiethanolamine  2.33% phosphoricacid (86%)  1.69% ascorbic acid  1.0% water 72.04%

Formulation A² benzyltrimethylammonium hydroxide, 40% aqueous solution 7.2% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% aminopropyl morpholine   10%4-methyl-2-phenyl-imidazole  1.0% water 81.12%

Formulation B² benzyltrimethylammonium hydroxide, 40% aqueous solution 7.2% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% aminopropyl morpholine   10%4-methyl-2-phenyl-imidazole  0.5% water 81.62%

Formulation C² benzyltrimethylammonium hydroxide, 40% aqueous solution 7.2% Potassium hydroxide, 45% aqueous solution  0.6%2-mercaptobenzimidazole  0.08% aminopropyl morpholine   10%4-methyl-2-phenyl-imidazole  1.0% water 81.02% dinonylphenolpolyoxyethylene  0.1%.


7. The cleaning composition of claim 1, wherein the alkali basecomprises potassium hydroxide.
 8. The cleaning composition of claim 1,wherein the chelator comprises 2-mercaptobenzimidazole.
 9. The cleaningcomposition of claim 1, wherein the chelator is present in an amountgreater than about 0.08 wt. %, based on the total weight of thecomposition.
 10. The composition of claim 1, further comprising asurfactant.
 11. The composition of claim 10, wherein the surfactantcomprises a surfactant species selected from the group consisting of:fluoroalkyl surfactants; polyethylene glycols; polypropylene glycols;polyethylene glycol ethers; polypropylene glycol ethers; carboxylic acidsalts; dodecylbenzenesulfonic acid and salts thereof; polyacrylatepolymers; dinonylphenyl polyoxyethylene; silicone polymers; modifiedsilicone polymers; acetylenic diols; modified acetylenic diols,alkylammonium salts; modified alkylammonium salts; and combinations oftwo or more of the foregoing.
 12. The composition of claim 1, furthercomprising a co-solvent.
 13. The composition of claim 12, wherein theco-solvent comprises a co-solvent species selected from the groupconsisting of: amines; glycols; glycol ethers; polyglycol ethers; andcombinations of two or more of the foregoing.
 14. The composition ofclaim 12, wherein the co-solvent comprises a co-solvent species selectedfrom the group consisting of: dimethyldiglycolamine;1,8-diazabicyclo[5.4.0]undecene; aminopropylmorpholine; triethanolamine;methylethanolamine; diethylene glycol; propylene glycol; neopentylglycol; hydroxyethylmorpholine; aminopropylmorpholine; di(ethyleneglycol)monoethyl ether; di(propylene glycol)propyl ether; ethyleneglycol phenyl ether; di(propylene glycol) butyl ether; butyl carbitol;polyglycol ethers; and combinations of two or more of the foregoing. 15.A method of removing photoresist and/or SARC material from a substratehaving said material thereon, said method comprising contacting thesubstrate with a cleaning composition for sufficient time to at leastpartially remove said material from the substrate, wherein the cleaningcomposition comprises a quaternary base, at least one alkali or alkalineearth base, and at least one additional component selected from thegroup consisting of a chelator, an oxirane species, and combinationsthereof, wherein said chelator comprises a species selected from thegroup consisting of: 1-amino-1,2,4-triazole; 1-amino-1,2,3-triazole;1-amino-5-methyl-1,2,3-triazole; 3-mercapto-1,2,4-triazole;3-isopropyl-1,2,4-triazole; naphthotriazole; 2-mercaptobenzimidazole;5-aminotetrazole; 5-amino-1,3,4-thiadiazole-2-thiol;2,4-diamino-6-methyl-1,3,5-triazine; triazine; methyltetrazole;1,5-pentamethylenetetrazole; 1-phenyl-5-mercaptotetrazole;diaminomethyltriazine; imidazoline thione;4-methyl-4H-1,2,4-triazole-3-thiol; 5-amino-1,3,4-thiadiazole-2-thiol;tritolyl phosphate; indiazole; adenine; salicylamide; iminodiaceticacid; benzoguanamine; thiocyranuric acid; anthranilic acid;3-mercaptopropanol; and combinations thereof, and wherein the oxiranespecies comprises a species selected from the group consisting of:oxirane, methyl-, polymer with oxirane, ether with2,2′-(oxidoimino)bis(ethanol) (2:1),N(-3(C9-11-isoalkyloxy)propyl)derivatives, C₁₀-rich; and oxirane,methyl-, polymer with oxirane, mono(octylphenyl)ether.
 16. The method ofclaim 15, wherein the substrate comprises a semiconductor devicestructure.
 17. The method of claim 15, wherein the material comprisesphotoresist.
 18. The method of claim 15, wherein the material comprisesSARC material.
 19. The method of claim 18, wherein the SARC material hasbeen applied to a semiconductor device structure to minimizereflectivity variations during photolithographic patterning on thesemiconductor device structure.
 20. The method of claim 15, wherein saidcontacting is carried out for a time of from about 10 to about 45minutes.
 21. The method of claim 15, wherein said contacting is carriedout at temperature in a range of from about 50° C. to about 80° C. 22.The method of claim 15, wherein the composition is devoid ofhydroxylamine therein.
 23. The method of claim 15, wherein thecomposition comprises the following components: 0.1-40.0 weight %organic quaternary base; 0.01-5 weight % alkali or alkaline earth base;0-80 weight % solvent(s) and/or amine(s); 0-5 weight % surfactant; 0-10weight % chelator/passivation agent; and 0-98 weight % water, whereinpercentages of the components are percentages by weight, based on totalweight of the composition, and wherein the total of the weightpercentages of such components of the composition does not exceed 100weight %.
 24. The method of claim 15, wherein the composition includesat least one additional ingredient selected from the group consisting ofstabilizers, dispersants, anti-oxidants, fillers, penetration agents,adjuvants, additives, fillers, and excipients.
 25. The method of claim15, wherein the composition comprises the following components: 2-15weight % organic quaternary base; ˜0.01-2 weight % alkali or alkalineearth base; 0-50 weight % solvent(s) and/or amine(s); ˜0.01-2 weight %surfactant; 0-5 weight % chelator/passivation agent; and 40-95 weight %water, wherein percentages of the components are percentages by weight,based on total weight of the composition, and wherein the total of theweight percentages of such components of the composition does not exceed100 weight %.
 26. The method of claim 15, wherein the alkali basecomprises potassium hydroxide.
 27. The method of claim 15, wherein thechelator comprises 2-mercaptobenzimidazole.
 28. The method of claim 27,wherein the chelator is present in an amount greater than about 0.08 wt.%, based on the total weight of the composition.
 29. The method of claim15, wherein the quaternary base comprises benzyltrimethylammoniumhydroxide.
 30. The method of claim 15, wherein the cleaning compositionfurther comprises a surfactant.
 31. The method of claim 30, wherein thesurfactant comprises a surfactant species selected from the groupconsisting of: fluoroalkyl surfactants; polyethylene glycols;polypropylene glycols; polyethylene glycol ethers; polypropylene glycolethers; carboxylic acid salts; dodecylbenzenesulfonic acid and saltsthereof; polyacrylate polymers; dinonylphenyl polyoxyethylene; siliconepolymers; modified silicone polymers; acetylenic diols; modifiedacetylenic diols, alkylammonium salts; modified alkylammonium salts; andcombinations of two or more of the foregoing.
 32. The method of claim15, wherein the cleaning composition further comprises a co-solvent. 33.The method of claim 32, wherein the co-solvent comprises a co-solventspecies selected from the group consisting of: amines; glycols; glycolethers; polyglycol ethers; and combinations of two or more of theforegoing.
 34. The method of claim 32, wherein the co-solvent comprisesa co-solvent species selected from the group consisting of:dimethyldiglycolamine; 1,8-diazabicyclo[5.4.0]undecene;aminopropylmorpholine; triethanolamine; methylethanolamine; diethyleneglycol; propylene glycol; neopentyl glycol; hydroxyethylmorpholine;aminopropylmorpholine; di(ethylene glycol)monoethyl ether; di(propyleneglycol)propyl ether; ethylene glycol phenyl ether; di(propylene glycol)butyl ether; butyl carbitol; polyglycol ethers; and combinations of twoor more of the foregoing.
 35. The cleaning composition of claim 1,wherein the quaternary base comprises an organic quaternary ammoniumbase.
 36. The cleaning composition of claim 1, wherein the quaternarybase comprises benzyltrimethylammonium hydroxide.
 37. The cleaningcomposition of claim 1, wherein the cleaning composition comprisesbenzyltrimethylammonium hydroxide and potassium hydroxide.
 38. Thecleaning composition of claim 12, wherein the co-solvent comprises aglycol ether.
 39. The cleaning composition of claim 1 comprisingbenzyltrimethylammonium hydroxide; potassium hydroxide; tetramethylenesulfone; di(ethyleneglycol)butyl ether; oxirane, methyl-, polymer withoxirane, mono(octylphenyl)ether; 2-mercaptobenzimidazole; and water. 40.A method of making a semiconductor device comprising contacting thesubstrate with the cleaning composition of claim 1 for sufficient timeto at least partially remove said material from the substrate.
 41. Thecleaning composition of claim 1, further comprising oxidant.